4
RF Device Data
Freescale Semiconductor
MRFE6VP5600HR6 MRFE6VP5600HSR6
Figure 2. MRFE6VP5600HR6(HSR6) Test
Circuit Component Layout -- Pulsed
MRFE6VP5600H
Rev. 1
COAX2
COAX1
COAX4
COAX3
C10
C11
C12
C13
R1
C1
C2
C4
C3
L1
C5
L2
C14
R2
C6
C7
C8
C9
C27 C28 C29
C26
L4
C19
C18
C15
C21
C17
C16
L3
C23 C24
C25
C22
C20
Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values -- Pulsed
Part
Description
Part Number
Manufacturer
C1
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C2, C3
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C4
0.8--8.0 pF Variable Capacitor, Gigatrim
27291SL
Johanson
C5
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C6, C10
22
μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C7, C11
0.1
μF Chip Capacitors
CDR33BX104AKYS
AVX
C8, C12
220 nF Chip Capacitors
C1812C224K5RACTU
Kemet
C9, C13, C22, C26
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C14
36 pF Chip Capacitor
ATC100B360JT500XT
ATC
C15
51 pF Chip Capacitor
ATC100B510GT500XT
ATC
C16, C17, C18, C19
240 pF Chip Capacitors
ATC100B241JT200XT
ATC
C20
39 pF Chip Capacitor
ATC100B390JT500XT
ATC
C21
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C23, C24, C25, C27, C28, C29
470
μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
Coax1, 2, 3, 4
25
?
Semi Rigid Coax, 2.2″
Long
UT--141C--25
Micro Coax
L1, L2
5 nH Inductors
A02TKLC
Coilcraft
L3, L4
6.6 nH Inductors
GA3093--ALC
Coilcraft
R1, R2
10
?
Chip Resistors
CRCW120610R0JNEA
Vishay
PCB
0.030″,
εr
=2.55
AD255A
Arlon
相关PDF资料
MRFE6VP61K25HSR6 MOSFET RF N-CH 1.25KW NI-1230S
MRFE6VP6300HSR3 FET RF N-CH 230MHZ 125V NI780S-4
MRFE6VP8600HSR6 RF FET LDMOS 50V NI1230S
MRFG35002N6AT1 TRANS RF 1.5W 6V PWR FET PLD-1.5
MRFG35002N6T1 TRANSISTOR RF FET 3.5GHZ PLD-1.5
MRFG35003ANR5 TRANSISTOR RF 3W 12V PLD-1.5
MRFG35003ANT1 TRANSISTOR RF 3W 12V PLD-1.5
MRFG35003M6T1 MOSFET RF 3.5GHZ 3W 6V 1.5-PLD
相关代理商/技术参数
MRFE6VP5600HR5-CUT TAPE 制造商:Freescale 功能描述:MRFE6VP Series 600 MHz 600 W 50 V N-Channel RF Power MOSFET - CASE 375D-5
MRFE6VP5600HR6 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP5600HR6_11 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRFE6VP5600HSR5 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP5600HSR6 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP61K25GSR5 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230GS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP61K25HR5 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP61K25HR5-CUT TAPE 制造商:Freescale 功能描述:MRFE6VP Series 600 MHz 1250 W 50 V N-Channel RF Power MOSFET - CASE 375D-5